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Infineon Technologies IPD053N08N3 G
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IPD053N08N3 G
Manufacturers: Infineon Technologies
Qty: 5627
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Description: MOSFET N-CH 80V 90A TO252-3
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Product Information:
Packaging:cxda-ReelR Alternate Packaging
Series:-
FET Type:MOSFET P-Channel, Metal Oxide
FET Feature:Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss):12V
Current - Continuous Drain (Id) @ 25°C:8A (Ta)
Rds On (Max) @ Id, Vgs:21 mOhm @ 8A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250μA
Gate Charge (Qg) @ Vgs:18nC @ 4.5V
Input Capacitance (Ciss) @ Vds:1370pF @ 6V
Power - Max:2.8W
Mounting Type:Surface Mount
Package / Case:6-UDFN Exposed Pad
Supplier Device Package:6-DFN-EP (2x2)
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